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2N1711 Datasheet(PDF) 3 Page - Comset Semiconductor

Part No. 2N1711
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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NPN 2N1613 – 2N1711
COMSET SEMICONDUCTORS
3
/3
Symbol
Ratings
Test Condition(s)
Min Typ
Mx
Unit
2N1613 IC=50 mA , VCE=10 V, f= 20MHz
60
-
-
fT
Transition Frequency
2N1711 IC=50 mA , VCE=10 V, f= 20MHz
70
-
-
MHz
CCBO
Collector-Base Capacitance
IE= 0 ,VCB= 10 V , f = 1MHz
-
-
25
pF
CEBO
Emitter-Base Capacitance
IC= 0 ,VEB= 0.5V , f = 1MHz
-
-
80
pF
2N1613
IC= 0.3 mA , VCE=10 V
f = 1 kHz , R9= 510
-
-
12
NF
Noise Figure
2N1711
IC= 0.3 mA , VCE=10 V
f = 1 kHz , R9= 510
-
-
8
dB
(*) Pulse conditions : tp < 300
µs, δ =1%.
MECHANICAL DATA CASE TO-39
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
DIMENSIONS (mm)
min
typ
max
A
12.7
-
-
B
-
-
0.49
D
-
-
6.6
E
-
-
8.5
F
-
-
9.4
G
5.08
-
-
H
-
-
1.2
I
-
-
0.9
L
45°
-
-
Pin 1 :
Emitter
Pin 2 :
Base
Case :
Collector




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