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2N1711 Datasheet(PDF) 2 Page - Comset Semiconductor

Part No. 2N1711
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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 2 page
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NPN 2N1613 – 2N1711
COMSET SEMICONDUCTORS
2
/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
VCE=60 V, IE=0
-
-
10
nA
ICBO
Collector Cutoff Current
VCE=60 V, IE=0, Tamb =
150°C
-
-
10
µA
2N1613 VEB=5 V
-
-
10
IEB0
Emitter Cutoff Current
2N1711 VEB=5 V
-
-
5
nA
VCBO
Collector Base Breakdown Voltage
IC=0.1 mA
75
-
-
V
VCER(*)
Collector Emitter Breakdown
Voltage
IC=10 mA , RBE=10
50
-
-
V
VEBO
Emitter Base Breakdown Voltage
IE=100 µA , IC=0
7
-
-
V
VCE(SAT)(*) Collector-Emitter saturation Voltage
IC=150 mA , IB=15 mA
-
-
1.5
V
VBE(SAT)(*) Base-Emitter saturation Voltage
IC=150 mA , IB=15 mA
-
-
1.3
V
IC=0.01 mA , VCE=10 V
-
35
-
IC=0.1 mA , VCE=10 V
20
-
-
IC=10 mA , VCE=10 V
35
-
-
IC=150 mA , VCE=10 V
40
-
120
IC=500 mA , VCE=10 V
20
-
-
2N1613
IC=10 mA , VCE=10 V,
Tamb=55°C
20
-
-
IC=0.01 mA , VCE=10 V
20
-
-
IC=0.1 mA , VCE=10 V
35
-
-
IC=10 mA , VCE=10 V
75
130
-
IC=150 mA , VCE=10 V
100
-
300
IC=500 mA , VCE=10 V
40
75
-
hFE(*)
DC Current Gain
2N1711
IC=10 mA , VCE=10 V,
Tamb=55°C
35
65
-
-
2N1613
IC=1 mA , VCE=10 V,
f = 1 kHz
30
-
150
hfe
Small Signal Current Gain
2N1711
IC=1 mA , VCE=10 V,
f = 1 kHz
70
-
300
-
2N1613
IC=1 mA , VCE=5 V,
f = 1 kHz
-
2.2
-
hje
Input Impedance
2N1711
IC=1 mA , VCE =5 V,
f = 1 kHz
-
4.4
-
k
2N1613
IC=1 mA , VCE =5 V,
f = 1 kHz
-
3.6x10
-4
-
hre
Reverse VoltageRatio
2N1711
IC=1 mA , VCE =5 V,
f = 1 kHz
-
7.3x10
-4
-
-
2N1613
IC=1 mA , VCE =5 V,
f = 1 kHz
-
12.5
-
hoe
Output Admitance
2N1711
IC=1 mA , VCE =5 V,
f = 1 kHz
-
23.8
-
µS




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