LY62102616

Rev. 0.3

1024K X 16 BIT LOW POWER CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 55/70ns

Low power consumption:

Operating current : 45/30mA (TYP.)

Standby current : 10

μA (TYP.) LL-version

Single 4.5V ~ 5.5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control :

LB# controlled DQ0 ~ DQ7

UB# controlled DQ8 ~ DQ15

DQ15 used as address pin, while LB#,

UB# and DQ8~DQ14 pins not used

Data retention voltage : 1.5V (MIN.)

Green package available

Package : 48-pin 12mm x 20mm TSOP-I

GENERAL DESCRIPTION

The LY62102616 is a 16,777,216-bit low power

CMOS static random access memory organized as

1,048,576 words by 16 bits or 2,097,152 words by 8

bits. It is fabricated using very high performance,

high reliability CMOS technology. Its standby current

is stable within the range of operating temperature.

The LY62102616 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY62102616 operates from a single power

supply of 4.5V ~ 5.5V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Power Dissipation

Product

Family

Operating

Temperature

Vcc Range

Speed

Operating(Icc,TYP.)

LY62102616

0 ~ 70℃

4.5 ~ 5.5V

55/70ns

10µA(LL)

45/30mA

LY62102616(E)

-20 ~ 80℃

4.5 ~ 5.5V

55/70ns

10µA(LL)

45/30mA

LY62102616(I)

-40 ~ 85℃

4.5 ~ 5.5V

55/70ns

10µA(LL)

45/30mA