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LY616416I Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY616416I Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 13 page LY616416 Rev. 1.1 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 15/20ns Low power consumption: Operating current : 140/110mA(MAX.) Standby current : 3mA(MAX. for 15/20ns) 100µA( (MAX. for 15/20ns LL version) Single 5V power supply All outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II GENERAL DESCRIPTION The LY616416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY616416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY616416 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1) Operating(Icc) LY616416 0 ~ 70℃ 4.5 ~ 5.5V 15/20ns 3mA(MAX.) 140/110mA(MAX.) LY616416(E) -20 ~ 80℃ 4.5 ~ 5.5V 15/20ns 3mA(MAX.) 140/110mA(MAX.) LY616416(I) -40 ~ 85℃ 4.5 ~ 5.5V 15/20ns 3mA(MAX.) 140/110mA(MAX.) LY616416(LL) 0 ~ 70℃ 4.5 ~ 5.5V 15/20ns 100µA(MAX.) 140/110mA(MAX.) LY616416(LLE) -20 ~ 80℃ 4.5 ~ 5.5V 15/20ns 100µA(MAX.) 140/110mA(MAX.) LY616416(LLI) -40 ~ 85℃ 4.5 ~ 5.5V 15/20ns 100µA(MAX.) 140/110mA(MAX.) |
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