LY616416

Rev. 1.1

5V 64K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 15/20ns

Low power consumption:

Operating current : 140/110mA(MAX.)

Standby current :

3mA(MAX. for 15/20ns)

100µA( (MAX. for 15/20ns LL version)

Single 5V power supply

All outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

GENERAL DESCRIPTION

The LY616416 is a 1,048,576-bit low power CMOS

static random access memory organized as 65,536

words by 16 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY616416 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY616416 operates from a single power

supply of 5V and all inputs and outputs are fully TTL

compatible

PRODUCT FAMILY

Power Dissipation

Product

Family

Operating

Temperature

Vcc

Range

Speed

Operating(Icc)

LY616416

0 ~ 70℃

4.5 ~ 5.5V

15/20ns

3mA(MAX.)

140/110mA(MAX.)

LY616416(E)

-20 ~ 80℃

4.5 ~ 5.5V

15/20ns

3mA(MAX.)

140/110mA(MAX.)

LY616416(I)

-40 ~ 85℃

4.5 ~ 5.5V

15/20ns

3mA(MAX.)

140/110mA(MAX.)

LY616416(LL)

0 ~ 70℃

4.5 ~ 5.5V

15/20ns

100µA(MAX.)

140/110mA(MAX.)

LY616416(LLE)

-20 ~ 80℃

4.5 ~ 5.5V

15/20ns

100µA(MAX.)

140/110mA(MAX.)

LY616416(LLI)

-40 ~ 85℃

4.5 ~ 5.5V

15/20ns

100µA(MAX.)

140/110mA(MAX.)