LY615128

Rev. 1.2

5V 512K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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FEATURES

Fast access time : 10/12/15ns

Low power consumption:

Operating current: 200/180/150mA (TYP.)

Standby current: 1mA (TYP.)

Single 5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

GENERAL DESCRIPTION

The LY615128 is a 4,194,304-bit low power CMOS

static random access memory organized as 524,288

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY615128 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY615128 operates from a single power

supply of 5V and all inputs and outputs are fully TTL

compatible

PRODUCT FAMILY

Power Dissipation

Product

Family

Operating

Temperature

Vcc Range

Speed

Operating(Icc,TYP.)

LY615128

0 ~ 70℃

4.5 ~ 5.5V

10/12/15 ns

1mA

200/180/150mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

512Kx8

MEMORY ARRAY

COLUMN I/O

A0-A18

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A18

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground

NC

No Connection