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LY62W5128UL Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY62W5128UL Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 11 page LY62W5128 Rev. 1.a 512K X 8 BIT LOW POWER CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Green package available Package : 32-pin 400 mil TSOP-II GENERAL DESCRIPTION The LY62W5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62W5128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62W5128 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1TYP.) Operating(Icc,TYP.) LY62W5128 0 ~ 70℃ 2.7 ~ 5.5V 55ns 4µA 30mA LY62W5128(E) -20 ~ 80℃ 2.7 ~ 5.5V 55ns 4µA 30mA LY62W5128(I) -40 ~ 85℃ 2.7 ~ 5.5V 55ns 4µA 30mA FUNCTIONAL BLOCK DIAGRAM DECODER I/O DATA CIRCUIT CONTROL CIRCUIT 512Kx8 MEMORY ARRAY COLUMN I/O A0-A18 Vcc Vss DQ0-DQ7 CE# WE# OE# PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection |
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