NYC0102BLT1G datasheet(2/5 Pages) ONSEMI

Part #	NYC0102BLT1G

Description	Sensitive Gate Silicon Controlled Rectifiers

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NYC0102BLT1G

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward Blocking Current

(VDRM = 200 V, RGK = 1 kW)TC = 25°C

TC = 125°C

IDRM

−

1.0

100

mA

Peak Repetitive Reverse Blocking Current

(VDRM = 200 V, RGK = 1 kW)TC = 25°C

TC = 125°C

IRRM

−

1.0

100

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage

(ITM = 0.4 A, tp < 1 ms, TC = 25°C)

VTM

−

1.7

V

Gate Trigger Current

(VD = 12 V, RL = 100 W, TC = 25°C)

IGT

−

200

mA

Gate Trigger Voltage

(VD = 12 V, RL = 100 W, TC = 25°C)

VGT

−

0.8

V

Holding Current

(IT = 50 mA, RGK = 1 kW, TC = 25°C)

IH

−

6.0

mA

Gate Non−Trigger Voltage

(VD = VDRM, RL = 3.3 kW, TC = 125°C)

VGD

0.1

−

V

Latching Current

(IG = 1.0 mA, RGK = 1 kW, TC = 25°C)

IL

−

7.0

mA

Gate Reverse Voltage

(IRG = 10 mA)

VRG

8.0

−

V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(RGK = 1 kW, TC = 125°C)

dv/dt

200

−

V/ms

Critical Rate of Rise of On−State Current

(IG = 2xIGT 60 Hz, tr < 100 ns, TJ = 125°C)

di/dt

−

50

A/ms

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak on State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

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