NTUD3128N datasheet(2/5 Pages) ONSEMI

Part #	NTUD3128N

Description	Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package

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NTUD3128N

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction-to-Ambient – Steady State (Note 3)

RqJA

1000

°C/W

Junction-to-Ambient – t = 5 s (Note 3)

600

3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

V

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 5 V

TJ = 25°C

50

nA

TJ = 85°C

200

VGS = 0 V, VDS = 16 V

TJ = 25°C

100

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5.0 V

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.4

1.0

V

Drain-to-Source On Resistance

RDS(ON)

VGS = 4.5 V, ID = 100 mA

1.5

3.0

W

VGS = 2.5 V, ID = 50 mA

2.0

4.0

VGS = 1.8 V, ID = 20 mA

3.0

6.0

VGS = 1.5 V, ID = 10 mA

4.0

10

VGS = 1.2 V, ID = 1.0 mA

5.5

Forward Transconductance

gFS

VDS = 5.0 V, ID = 125 mA

0.35

S

Source-Drain Diode Voltage

VSD

VGS = 0 V, ID = 10 mA

0.6

1.0

V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

f = 1.0 MHz, VGS = 0 V

VDS = 15 V

9.0

pF

Output Capacitance

COSS

3.0

Reverse Transfer Capacitance

CRSS

2.2

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V, ID = 200 mA,

RG = 2.0 W

15

ns

Rise Time

tr

24

Turn-Of f Delay Time

td(OFF)

90

Fall Time

tf

60

4. Switching characteristics are independent of operating junction temperatures.

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