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TB62709F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TB62709F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 24 page 586 120 Broadway • Menands, New York 12204 Toll Free: (800) 98-4LEDS • Fax: (518) 432-7454 marktech optoelectronics TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic For up-to-date product info visit our web site at www.marktechopto.com All specifications subject to change. TB62709N/F TB62709N/F TB62709N/F TB62709N/F TB62709N/F Recommended Operating Conditions: CHARACTERISTICS SYMBOL TEST CIRCUIT CONDITION MIN. TYP. MAX. UNIT Output Stage Supply Current ICC1 1 Set normal operation mode, Rext=760 Ω, Out a~DP, all ON VCC = 5V, Ta=25°C —300 — mA ICC2 1 Set normal operation mode, Rext=760 Ω, Out a~DP, all ON VCC = 5V, Ta=25°C —320 — mA Digit 0~3 Scanning Freq. fOSC 2 Normal operation mode, VDD=4.5 - 5.5V 240 480 960 Hz Out a~DP Output Current ISEG 3 Normal operation mode, VDD=4.5 - 5.5V 29 34 40 mA Digit 0~3 Leakage Current ILEAK1 4 All off mode, VCC=17V — — -20 µA Out a~DP Leakage Current ILEAK2 4 All off mode, VCC=17V — — 20 µA Digit 0~3 Output Voltage VOUT 5 Normal operation mode IDIG = 320mA 3.0 — — V Logic Supply Current IDD1 6 Standby Mode, Ta=25°C — — 200 µA IDD2 6 Blank Mode, Ta=25°C — — 12.5 mA Operating Supply Current IDD3 6 Normal operating mode fCLK=10MHz, Ta=25°C Data-in:output a~DP on — — 20.5 mA High Level Input Current IIH — Data-in, Load&Clock VIN=5V — — 1 µA Low Level Output Current IIL — Data-in, Load&Clock VIN=0V — — -1 µA High Level Output Voltage VOH1 6 Data out, IOH=-1mA 4.6 — — V VOH2 6 Data-out, IOH=-1µA — VDD — V Low Level Output Voltage VOL1 6 Data out, IOH=-1mA — — 0.4 V VOL2 6 Data-out, IOH=-1µA — 0.1 — V Clock Frequency FCLK 6 CASCADE connected, TA = -40 ~ 85ºC 10 — — MHz |
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