NTGS3136PT1G datasheet(4/5 Pages) ONSEMI

Part #	NTGS3136PT1G

Description	Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6

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NTGS3136P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

Figure 7. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

Figure 8. Diode Forward Voltage vs. Current

Figure 9. Threshold Voltage

Figure 10. Single Pulse Maximum Power

Dissipation

SINGLE PULSE TIME (s)

QG, TOTAL GATE CHARGE (nC)

VDS = -10 V

ID = -5.1 A

TJ = 25°C

-V GS

QGS

QGD

-V DS

-V SD, SOURCE-TO-DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

TJ = 150°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

VGS = -8.0 V

SINGLE PULSE

TC = 25°C

RDS(on) LIMIT

Thermal Limit

Package Limit

100

ms

1 ms

10 ms

dc

-V DS, DRAIN-TO-SOURCE VOLTAGE (V)

-50

0

-25

25

0.7

0.5

0.3

0.2

50

125

100

TJ, JUNCTION TEMPERATURE (°C)

75

150

ID = -250 mA

0.8

0.6

0.4

0

1

2

3

4

5

0

2

4

6

8

10

12

14

16

18

0

2

4

6

8

10

12

QT

1.0

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

80

70

60

50

40

30

20

10

0

1E-3

1E-2

1E-1

1

1E+1

1E+2

1E+3

0.01

0.1

1

1E-04 1E-03 1E-02

1E-01

1

1E+01 1E+02 1E+03

t, TIME (s)

Figure 12. FET Thermal Response

Duty Cycle = 0.5

0.2

0.1

0.05

0.01

0.02

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