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NTGS3136PT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NTGS3136PT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 5 page NTGS3136P http://onsemi.com 4 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation SINGLE PULSE TIME (s) QG, TOTAL GATE CHARGE (nC) VDS = -10 V ID = -5.1 A TJ = 25°C -V GS QGS QGD -V DS -V SD, SOURCE-TO-DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C TJ = 150°C Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 VGS = -8.0 V SINGLE PULSE TC = 25°C RDS(on) LIMIT Thermal Limit Package Limit 100 ms 1 ms 10 ms dc -V DS, DRAIN-TO-SOURCE VOLTAGE (V) -50 0 -25 25 0.7 0.5 0.3 0.2 50 125 100 TJ, JUNCTION TEMPERATURE (°C) 75 150 ID = -250 mA 0.8 0.6 0.4 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 QT 1.0 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 80 70 60 50 40 30 20 10 0 1E-3 1E-2 1E-1 1 1E+1 1E+2 1E+3 0.01 0.1 1 1E-04 1E-03 1E-02 1E-01 1 1E+01 1E+02 1E+03 t, TIME (s) Figure 12. FET Thermal Response Duty Cycle = 0.5 0.2 0.1 0.05 0.01 0.02 |
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