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NTD4854N-35G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTD4854N-35G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NTD4854N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.84 1.2 V TJ = 125°C 0.71 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 31.3 ns Charge Time ta 16 Discharge Time tb 15.3 Reverse Recovery Charge QRR 20.2 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.6 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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