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NCP693DMN33TCG Datasheet(PDF) 2 Page - ON Semiconductor |
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NCP693DMN33TCG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NCP693 http://onsemi.com 2 Current Limit & Thermal Shutdown Vin GND Vref Vin CE Vout Vout Current Limit & Thermal Shutdown Vin GND Vref Vin CE Vout Vout Version H (NCP693HMNxxTCG) Version D (NCP693DMNxxTCG) Figure 1. Internal Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 Vout Regulated output voltage. 2 Vout Regulated output voltage. 3 GND Power supply ground. 4 CE This input is used to place the device into low−power standby. When this input is pulled low, the device is disabled. If this function is not used, Enable should be connected to Vin. 5 Vin Positive power supply input voltage. 6 Vin Positive power supply input voltage. EP GND Power supply ground. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 7 V Enable Voltage VCE −0.3 to Vin V Output Voltage Vout −0.3 to Vin + 0.3 V Operating Junction Temperature TJ +150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per (JEDEC 22−A114−B) Machine Model Method 200 V THERMAL CHARACTERISTICS Rating Symbol Test Conditions Typical Value Unit Junction−to−Ambient RqJA 1 oz Copper Thickness, 100 mm2 114 °C/W PSIJ−Lead 2 YJ−L2 1 oz Copper Thickness, 100 mm2 25 °C/W Power Dissipation PD 880 mW NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12. |
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