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NCP693HMN25TCG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP693HMN25TCG
Description  1A CMOS Low-Dropout Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP693HMN25TCG Datasheet(HTML) 3 Page - ON Semiconductor

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NCP693
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (Vin = Vout(nom) + 1.0 V, VCE = Vin, Cin = 2.2 mF, Cout = 2.2 mF, TA = 25°C,
unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (TA = 25°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
0.785
0.985
1.185
2.475
3.267
0.8
1.0
1.2
2.5
3.3
0.815
1.015
1.215
2.525
3.333
V
Output Voltage (TA = − 40°C to 85°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
0.760
0.960
1.160
2.435
3.214
0.8
1.0
1.2
2.5
3.3
0.827
1.027
1.227
2.545
3.359
V
Output Current
Iout
1
A
Input Voltage
Vin
1.6
6.5
V
Line Regulation (Vin = Vout + 1.0 V to 6.5 V, Iout = 10 mA)
Regline
0.05
0.1
%/V
Load Regulation (Iout = 1 mA to 300 mA, Vin = Vout + 2.0 V)
Regload03
20
40
mV
Load Regulation (Iout = 1 mA to 1 A, Vin = Vout + 2.0 V)
Regload1
80
120
mV
Supply Current (Iout = 0 A, Vin = 6.5 V)
Iss
65
90
mA
Standby Current (VCE = 0 V, Vin = 6.5 V)
Istby
0.15
0.6
mA
Short Current Limit (Vout = 0 V)
Ish
250
mA
Output Voltage Temperature Coefficient
Tc
$100
ppm/°C
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
VthCE
1.0
0.4
V
Enable Pulldown Current
0.3
mA
Drop Output Voltage (TA = 25°C, Iout = 300 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vin−Vout
0.670
0.450
0.300
0.150
0.130
0.780
0.610
0.500
0.310
0.170
V
Drop Output Voltage (TA = 25°C, Iout = 1 A)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vin−Vout
1.150
1.000
0.870
0.500
0.430
1.650
1.450
1.380
1.100
0.650
V
Ripple Rejection (Ripple 200 mVpp, Iout = 100 mA, f = 1 kHz)
PSRR
70
dB
Output Noise (BW = 10 Hz to 100 kHz, Iout = 1 mA)
Vnoise
45
mVrms
Thermal Shutdown Temperature/Hysteresis
Tshd/Hyst
165/30
°C
RDS(on) of additional output transistor (D version only)
RDS(on)
30
W
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.


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