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ESD9R3.3ST5G Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESD9R3.3ST5G
Description  Transient Voltage Suppressors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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ESD9R3.3ST5G Datasheet(HTML) 2 Page - ON Semiconductor

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ESD9R3.3ST5G
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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Max. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types)
Device
Device
Marking
VRWM
(V)
IR (nA) @ 1 V
TA = 05C
to 505C
(Note 4)
VBR (V) @ IT
(Note 2)
IT
C (pF)
VC (V)
@ IPP = 1 A
(Note 5)
VC
Max
Max
Min
mA
Typ
Max
Max
Per IEC61000−4−2
(Note 3)
ESD9R3.3ST5G
J*
3.3
1.0
4.8
1.0
0.5
0.9
7.8
Figures 1 and 2
See Below
*Rotated 270°.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Limits over temperature are guaranteed by design, not production tested.
5. VC measured using pulse waveform in Figure 5.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2


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