2009

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

• This product is improvement of ESD of NESG2xxx series.

• 3-pin minimold (33 PKG)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG240033

NESG240033-A

50 pcs

(Non reel)

NESG240033-T1B

NESG240033-T1B-A

3-pin minimold

(33 PKG) (Pb-Free)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side

of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

5.5

V

Collector to Emitter Voltage

13

V

Collector to Emitter Voltage

5.5

V

Base Current

Note 1

36

mA

Collector Current

400

mA

Total Power Dissipation

Note 2

480

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Notes 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm

× 9.0 cm ×0.8 mm (t) glass epoxy PWB

<R>

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

NPN SILICON GERMANIUM RF TRANSISTOR

NESG240033

NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN MINIMOLD (33 PKG)

Document No. PU10768EJ02V0DS (2nd edition)

Date Published November 2009 NS

Printed in Japan