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NESG240033-T1B-A Datasheet(PDF) 1 Page - NEC |
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NESG240033-T1B-A Datasheet(HTML) 1 Page - NEC |
1 / 8 page 2009 FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maximum stable power gain: MSG =13.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 10.5 GHz • This product is improvement of ESD of NESG2xxx series. • 3-pin minimold (33 PKG) ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG240033 NESG240033-A 50 pcs (Non reel) NESG240033-T1B NESG240033-T1B-A 3-pin minimold (33 PKG) (Pb-Free) 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.5 V Collector to Emitter Voltage VCES 13 V Collector to Emitter Voltage VCEO 5.5 V Base Current Note 1 IB 36 mA Collector Current IC 400 mA Total Power Dissipation Ptot Note 2 480 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB <R> The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) Document No. PU10768EJ02V0DS (2nd edition) Date Published November 2009 NS Printed in Japan |
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