NESG220034-T1-A datasheet(4/9 Pages) NEC

Part #	NESG220034-T1-A

Description	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

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TYPICAL CHARACTERISTICS (TA = +25

°C, unless otherwise specified)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

0

50

100

150

200

12

3

4

5

1 700 A

1 500 A

1 300

A

1 100

A

900

A

700

A

500

A

300

A

IB = 100

A

μ

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

0.4

0.01

0.1

1

10

100

0.5

0.6

0.7

0.8

0.9

0.001

0.0001

VCE = 5 V

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

0.4

0.01

0.1

1

10

100

0.5

0.6

0.7

0.8

0.9

0.001

0.0001

VCE = 3 V

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

12

3

5

0

1.2

1.1

1.0

0.9

0.8

0.7

0.6

4

f = 1 MHz

Ambient Temperature TA (

°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

125

150

0

1 000

500

25

50

75

100

3.8 cm

× 9.0 cm × 0.8 mm (t),

FR–4

886

Remark The graphs indicate nominal characteristics.

<R>

Data Sheet PU10767EJ02V0DS

4

NESG220034

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