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3VD186600YL Datasheet(PDF) 1 Page - Silan Microelectronics Joint-stock |
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3VD186600YL Datasheet(HTML) 1 Page - Silan Microelectronics Joint-stock |
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1 / 1 page  3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltage- blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 1.96mm*1.78mm. Chip Thickness: 300±20 μm. Top metal : Al, Backside Metal : Ag. 1 3 3-Source PAD 1-Gate PAD CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 1.0 A Operation Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250uA 600 --- ---- V Gate-Threshold Voltage Vth(GS) ID=250uA ,VDS=VGS 2.0 --- 4.0 V Gate-Body Leakage lGSS VGS=±30V, VDS=0V --- --- ±100 nA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V --- --- 1.0 µA Drain-Source On-Resistance RDS(on) ID=0.4A, VGS=10V --- --- 11 Ω Source-Drain Diode Forward On Voltage VFSD ID=1.0A,VGS=0V --- --- 1.4 V HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2008.10.15 Http:www.silan.com.cn Page 1 of 1 |
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