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2SB139060ML Datasheet(PDF) 1 Page - Silan Microelectronics Joint-stock |
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2SB139060ML Datasheet(HTML) 1 Page - Silan Microelectronics Joint-stock |
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1 / 1 page  2SB139060ML HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2007.04.27 Http: www.silan.com.cn Page 1 of 1 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Ø Chip Size:1390 µm X 1390µm; Ø Chip Thickness: 280±20 µm; Chip Topography and Dimensions La: Chip Size: 1390 µm; Lb: Pad Size: 1295 µm; ORDERING SPECIFICATIONS Product Name Specification 2SB139060MLYY For axial leads package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 60 V Average Forward Rectified Current IFAV 3 A Peak Forward Surge Current@8.3ms IFSM 80 A Maximum Operation Junction Temperature TJ 125 °C Storage Temperature Range TSTG -40~125 °C ELECTRICAL CHARACTERISTICS (Tamb=25 °C) Parameters Symbol Test Conditions Min. Max. Unit Reverse Voltage VBR IR=0.5mA 60 -- V Forward Voltage VF IF=3A -- 0.75 V Reverse Current IR VR=60V -- 0.5 mA |
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