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CZRERT52C18 Datasheet(PDF) 1 Page - Comchip Technology |
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CZRERT52C18 Datasheet(HTML) 1 Page - Comchip Technology |
1 / 6 page Voltage 2 to 39 Volts Power 150 mWatts Page 1 QW-A2014 Features 150mW Power Dissipation. High Voltages from 2 ~ 39 V. Designed for mounting on small surface. Extremely thin/leadless package. Pb free product. Mechanical data Case: 0503(1308)Standard package Molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Weight: gram(approx.). 0.0011 Peak ESD voltage capability (IEC 61000-4-2) Parameter Symbol Value 0.9 150 8 Unit V mW Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load( JEDEC method ) 2.0 A Maximum Rating AND Electrical Characteristics IFSM PD VF VPV kV Maximum Forward Voltage Drop at IF = 10 mA O Maximum Power Dissipation at 25 C REV:A SMD Diodes Specialist Operating Junction and Storage Temperature Range -55 to +125 TJ OC (RoHS Device) CZRERT52C2 Thru CZRERT52C39 SMD Zener Diode Comchip Technology CO., LTD. 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.022(0.55) 0.018(0.45) Dimensions in inches and (millimeter) 0503(1308) 0.022(0.55) Typ. 0.016(0.40) Typ. |
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Similar Description - CZRERT52C18 |
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