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CZRFR52C24 Datasheet(PDF) 1 Page - Comchip Technology |
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CZRFR52C24 Datasheet(HTML) 1 Page - Comchip Technology |
1 / 6 page Voltage 2 to 39 Volts Power 200 mWatts Page 1 QW-A2008 Features 200mW Power Dissipation. High Voltages from 2 ~ 39 V. Designed for mounting on small surface. Extremely thin/leadless package. Pb free product. Mechanical data Case: 1005(2512)Standard package Molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Weight: 0.006 gram(approx.). Peak ESD voltage capability (IEC 61000-4-2) Parameter Symbol Value 0.9 200 8 Unit V mW Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load( JEDEC method ) 2.0 A Maximum Rating AND Electrical Characteristics IFSM PD VF VPV kV Maximum Forward Voltage Drop at IF = 10 mA O Maximum Power Dissipation at 25 C REV:B SMD Diodes Specialist 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 1005(2512) 0.020(0.50) Typ. 0.040(1.00) Typ. Operating Junction and Storage Temperature Range -55 to +125 TJ OC (RoHS Device) CZRFR52C2 Thru CZRFR52C39 SMD Zener Diode Comchip Technology CO., LTD. |
Similar Part No. - CZRFR52C24 |
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Similar Description - CZRFR52C24 |
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