Part Name
         Description
ADP3611MNR2G

 Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable ( 13 Page)


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Table 2. ELECTRICAL CHARACTERISTICS (VCC = SD = 5 V, BST − SW = 5 V, TA = −10°C to 100°C, unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
LOGIC INPUTS (IN, SD, DRVLSD, CROWBAR)
Input Voltage High
VIH
2.0
V
Input Voltage Low
VIL
0.8
V
Input Current
IIN
Inputs = 0 V or 5 V, IN, SD, DRVLSD
−1
+1
mA
CROWBAR Resistance
RIN
Resistance from CROWBAR to GND
250
kW
DRVLSD Propagation Delay Time
tpdlDRVLSD
tpdhDRVLSD
CLOAD = 3 nF, Figure 3
20
ns
HIGH−SIDE DRIVER
Output Resistance, Sourcing Current
1.9
3.3
W
Output Resistance, Sinking Current
1.0
2.3
W
Transition Times
trDRVH
CLOAD = 3 nF, Figure 4
20
35
ns
tfDRVH
CLOAD = 3 nF, Figure 4
15
25
ns
Propagation Delay Times (Note 1)
tpdhDRVH
CLOAD = 3 nF, Figure 4
15
30
60
ns
tpdlDRVH
CLOAD = 3 nF, Figure 4
20
40
ns
LOW−SIDE DRIVER
Output Resistance, Sourcing Current
1.7
3.3
W
Output Resistance, Sinking Current
0.8
2.3
W
Transition Times
trDRVL
CLOAD = 3 nF, Figure 4
20
30
ns
tfDRVL
CLOAD = 3 nF, Figure 4
15
25
ns
Propagation Delay Times
(Notes 1 and 2)
tpdhDRVL
CLOAD = 3 nF, Figure 4
15
40
ns
tpdlDRVL
CLOAD = 3 nF, Figure 4
15
30
ns
SW Transition Timeout (Note 2)
tSWTO
SW = 2 V
150
270
450
ns
Zero−crossing Threshold
VZC
1.8
V
BOOTSTRAP RECTIFIER
Output Resistance
RBOOT
10
18
W
SWITCH NODE RESISTOR
Switch Node Resistor
RSW
EN = 0 V
3
kW
SUPPLY
Supply Voltage Range
VCC
4.6
5.5
V
Supply Current − Normal Mode
ISYS(NM)
ICC + IBST, IN = 0 V or 5 V
0.5
1
mA
Supply Current − Shutdown Mode
ISYS(SD)
ICC + IBST, SD = 0 V
30
200
mA
Undervoltage Lockout Threshold
VCC Rising
4
4.35
4.5
V
Undervoltage Lockout Hysteresis
(Note 3)
VCC Falling
50
210
mV
NOTE: All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.
1. For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to the signal going low with transitions measured at 50%.
2. The turn−on of DRVL is initiated after IN goes low by either SW crossing a ~1 V threshold or by expiration of tSWTO.
3. Guaranteed by characterization, not production tested.



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