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DE475-102N20A Datasheet(PDF) 5 Page - IXYS Corporation

Part # DE475-102N20A
Description  RF Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

DE475-102N20A Datasheet(HTML) 5 Page - IXYS Corporation

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DE475-102N20A
RF Power MOSFET
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
102N20A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the
device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer ca-
pacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de475-102n20a.html
Net List:
.SUBCKT 102N20A 10 20 30
* TERMINALS: D G S
* 1000 Volt 20 Amp 0.6 ohm N-Channel Power MOSFET
* REV.A 10-29-01
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.5
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 6.2N
RD
4 1 0.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS
3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0238 Rev 6
© 2009 IXYS RF


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