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CGD1042H Datasheet(PDF) 1 Page - NXP Semiconductors |
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CGD1042H Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 45 MHz - 21.5 - dB f = 1000 MHz 22.0 23.0 24.0 dB Itot total current [1] 430 450 470 mA [1] Direct Current (DC). |
Similar Part No. - CGD1042H_09 |
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Similar Description - CGD1042H_09 |
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