HSD64M64F8KA-10L datasheet(4/10 Pages) HANBIT

Part #	HSD64M64F8KA-10L

Description	Synchronous DRAM Module 512Mbyte (64Mx64bit), SMM, based on 32Mx8 ,4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD64M64F8KA

URL:www.hbe.co.kr

4

HANBit Electronics Co.,Ltd.

REV. 1.0 (August, 2002)

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C) )

PARAMETER

SYMBOL

MIN

TYP.

MAX

UNIT

NOTE

Supply Voltage

Vcc

3.0

3.3

3.6

V

Input High Voltage

VIH

2.0

3.0

Vcc+0.3

V

1

Input Low Voltage

VIL

-0.3

0

0.8

V

2

Output High Voltage

VOH

2.4

-

V

IOH = -2mA

Output Low Voltage

VOL

-

0.4

V

IOL = 2mA

Input leakage current

I LI

-10

-

10

uA

3

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V

≤ V

IN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Input capacitance(A0~A11)

CIN1

40

80

pF

Input capacitance(/RAS, /CAS,/WE)

CIN2

40

80

pF

Input capacitance(CKE0)

CIN3

40

80

pF

Input capacitance(CLK0)

CIN4

40

64

pF

Input capacitance(/CS0~/CS3)

CIN5

40

80

pF

Input capacitance(DQM0~DQM7)

CIN3

40

64

pF

Input capacitance(BA0~BA1)

CIN3

40

64

pF

Data input/output capacitance (DQ0 ~ DQ63)

COUT

64

104

pF

(Vcc = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

VERSION

PARAMETER

SYMBOL

TEST

CONDITION

-10

-10L

-13

UNIT

NOT

E

Operating current

(One bank active)

ICC1

Burst length = 1

tRC ≥ tRC(min) IO = 0mA

720

800

mA

1

ICC2P

CKE

≤ V

IL(max) tCC=10ns

16

mA

3

Precharge standby

current in

power-down mode

ICC2PS

CKE & CLK

≤ V

IL(max)

tCC=∞

16

mA

3

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