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RJK0629DPN Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0629DPN Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK0629DPN Preliminary REJ03G1873-0100 Rev.1.00 Dec 15, 2009 Page 4 of 6 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 Gate Charge Qg (nC) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating Tc = 25 °C ID = 85 A VDS VGS VDD = 25 V 10 V 5 V VDD = 25 V 10 V 5 V 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 Tc = 25 °C Pulse Test VGS = 0, −5 V 10 V 500 400 300 200 100 25 50 75 100 125 175 150 0 IAP = 55 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature 20 16 −50 0 50 100 150 200 0 4 12 8 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage VGS = 4.5 V 10 V Pulse Test ID = 43 A 0 5 10 15 20 25 30 3000 10000 1000 300 100 Tc = 25 °C VGS = 0 f = 1 MHz Ciss Coss Crss |
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