HANBit

HMNR5128D(V)

URL : www.hbe.co.kr

4

HANBit Electronics Co.,Ltd

Rev. 2.0 (March, 2002)

Capacitance

Symbol

Parameter

(1,2)

Min

Max

Unit

Input Capacitance

10

pF

(3)

Input/Output Capacitance

10

pF

Note :

1.

Effective capacitance measured with power supply at 5V (HMNR5128D) or 3.3V (HMNR5128DV). Sampled only,

not 100% tested.

2.

At 25° C, f = 1MHz.

3.

Outputs deselected.

DC Characteristics

HMNR5128D

HMN5128DV

Symbol

Parameter

Test Condition

(1)

Min

Typ

Max

Min

Typ

Max

Unit

Input Leakage Current

±

1

±

1

uA

(2)

Output Leakage Current

±

1

±

1

uA

Supply Current

Outputs open

8

15

4

10

mA

Supply Current (Standby) TTL

5

3

mA

Supply Current (Standby)

CMOS

3

2

mA

Battery Current OSC ON

575

800

575

800

nA

Battery Current OSC

OFF

100

100

nA

Input Low Voltage

-0.3

0.8

-0.3

0.8

V

Input High Voltage

2.2

VCC+

0.3

2.0

VCC+

0.3

V

Output Low Voltage

0.4

0.4

V

Output Low Voltage

(open drain)

(4)

0.4

0.4

V

Output High Voltage

2.4

2.4

V

2.0

3.6

2.0

3.6

V

100

70

mA

100

100

uA

Power-fail Deselect Voltage

4.1

4.35

4.5

2.7

2.9

3.0

V

Battery Back-up Switchover

Voltage

3.0

100

mV

V

Battery Voltage

3.0

3.0

V

Note: 1. Valid for Ambient Operating Temperature: TA =0 to 70° C or 40 to 85°C ;

VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

2. Outputs deselected.