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HAT2189WP-EL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAT2189WP-EL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 1 of 6 HAT2189WP Silicon N Channel Power MOS FET Power Switching REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 8.5 A Drain peak current ID (pulse) Note1 17 A Body-drain diode reverse drain current IDR 8.5 A Body-drain diode reverse drain peak current IDR (pulse) Note1 17 A Avalanche current IAP Note3 8.5 A Avalanche energy EAR Note3 4.8 mJ Channel dissipation Pch Note2 20 W Channel to case thermal impedance θch-c 6.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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