HAT3008R_09 datasheet(9/12 Pages) RENESAS

Part #	HAT3008R

Description	Silicon N / P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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9 / 12 page

HAT3008R, HAT3008RJ

Preliminary

REJ03G1198-0500 Rev.5.00 Aug 25, 2009

Page 9 of 11

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

2.5

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

Channel Temperature Tch (°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

IAP = –3.5 A

VDD = –25 V

L = 100

μH

duty < 0.1 %

Rg

≥ 50 Ω

–10

0

–2

–4

–6

–8

0

–0.4

–0.8

–1.2

–1.6

–2.0

Pulse Test

5 V

VGS = 0, 5 V

10 V

Avalanche Test Circuit

Avalanche Waveform

0

ID

VDS

IAP

V(BR)DSS

VDD

EAR =

• L • IAP

2 •

2

1

VDSS

VDSS – VDD

D.U.T

Rg

IAP

Monitor

VDS

Monitor

VDD

50

Ω

Vin

–15 V

L

tr

td(on)

Vin

90%

10%

Vout

td(off)

90%

10%

tf

Switching Time Test Circuit

Switching Time Waveform

Vin Monitor

D.U.T.

Vin

–10 V

RL

Vout

Monitor

50

Ω

VDD

= –30 V

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HAT3008R Datasheet(PDF) 9 Page - Renesas Technology Corp

HAT3008R Datasheet(HTML) 9 Page - Renesas Technology Corp

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