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H7N1002LS Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H7N1002LS Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page  H7N1002LD, H7N1002LS, H7N1002LM Preliminary REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 2 of 8 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 μA, VDS = 0 Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 μA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 V Note 4 — 8 10 m Ω ID = 37.5 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 10 15 m Ω ID = 37.5 A, VGS = 4.5 V Note 4 Forward transfer admittance |yfs| 57 95 — S ID = 37.5 A, VDS = 10 V Note 4 Input capacitance Ciss — 9700 — pF Output capacitance Coss — 740 — pF Reverse transfer capacitance Crss — 330 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 155 — nC Gate to source charge Qgs — 35 — nC Gate to drain charge Qgd — 33 — nC VDD = 50 V VGS = 10 V ID = 75 A Turn-on delay time td (on) — 43 — ns Rise time tr — 245 — ns Turn-off delay time td (off) — 130 — ns Fall time tf — 25 — ns VGS = 10 V, ID = 37.5 A RL = 0.8 Ω Rg = 4.7 Ω Body to drain diode forward voltage VDF — 0.93 — V IF = 75 A, VGS = 0 Body to drain diode reverse recovery time trr — 70 — ns IF = 75 A, VGS = 0 diF/dt = 100 A/μs Note: 4. Pulse test |
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