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HMF8M16F8VS-100 Datasheet(PDF) 4 Page - Hanbit Electronics Co.,Ltd |
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HMF8M16F8VS-100 Datasheet(HTML) 4 Page - Hanbit Electronics Co.,Ltd |
4 / 12 page HANBit HMF8M16F8VS URL: www.hbe.co.kr HANBit Electronics Co., Ltd. REV.02(August,2002) 4 ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. TYP. MAX. UNIT COMMENTS Block Erase Time - 0.7 15 Sec Excludes 00H programming prior to erasure Byte Programming Time - 9 270 µS Excludes system-level overhead Chip Programming Time - 18 54 sec Excludes system-level overhead CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION TEST SETUP MIN. MAX UNIT CIN Input Capacitance VIN = 0 10 pF COUT Output Capacitance VOUT = 0 10 pF CIN2 Control Pin Capacitance VIN = 0 10 pF Notes: Test conditions TA = 25 o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS CL=100pF -90 -100 -120 JEDEC STANDARD DESCRIPTION Min Max Min Max Min Max UNIT tAVAV tRC Read Cycle Time 90 100 120 ns tELQV tCE Chip Enable to Output Delay 90 100 120 ns tGLQV tOE Chip Enable to Output Delay 35 40 50 ns tEHQZ tDF Chip Enable to Output High-Z 30 30 30 ns tAXQX tQH Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First 0 0 0 ns TEST CONDITIONS |
Similar Part No. - HMF8M16F8VS-100 |
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Similar Description - HMF8M16F8VS-100 |
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