HANBiT

HMD32M32M16EG

URL:www.hbe.co.kr

HANBiT Electronics Co.,Ltd.

REV.1.0 (August. 2002)

- 6 -

o

C

≤ T

oC , Vcc = 5V±10%)

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNIT

NOTE

Hyper page mode cycle time

20

25

ns

11

/CAS precharge time (Hyper page cycle)

8

10

ns

/RAS pulse width (Hyper page cycle)

50

200K

60

200K

ns

/RAS hold time from /CAS precharge

30

35

ns

/W to RAS precharge time (C-B-R refresh)

10

10

ns

/W to RAS hold time (C-B-R refresh)

10

10

ns

Output data hold time

5

5

ns

Output buffer turn off delay from /RAS

3

13

3

15

ns

6,12

Output buffer turn off delay from W

3

13

3

15

ns

6

/W to data delay

15

15

ns

/W puls width

5

5

ns

NOTES

1. An initial pause of 200us is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh

cycles before proper device operation is achieved.

3. Measured with a load equivalent to 1 TTL loads and 100pF.

of the cycle.

9. These parameters are referenced to the /CAS leading edge in early write cycles.

11. tASC

≥6ns, Assume t T=2.0ns.

12. If /RAS goes high before /CAS high going, the open circuit condition of the output is achieved by /CAS high going.

If /CAS goes high before /RAS high going , the open circuit condition of the output is achieved by /RAS going.

.