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AT45DB011D-MH-SL955 Datasheet(PDF) 8 Page - ATMEL Corporation |
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AT45DB011D-MH-SL955 Datasheet(HTML) 8 Page - ATMEL Corporation |
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8 / 52 page  8 3639H–DFLASH–04/09 AT45DB011D will first erase the selected page in main memory (the erased state is a logic 1) and then pro- gram the data stored in the buffer into the specified page in main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the status register will indicate that the part is busy. 7.3 Buffer to Main Memory Page Program without Built-in Erase A previously-erased page within main memory can be programmed with the contents of the buf- fer. A 1-byte opcode, 88H, must be clocked into the device. For the DataFlash standard page size (264 bytes), the opcode must be followed by three address bytes consist of 6 don’t care bits, 9 page address bits (PA8 - PA0) that specify the page in the main memory to be written and 9 don’t care bits. To perform a buffer to main memory page program without built-in erase for the binary page size (256 bytes), the opcode 88H must be clocked into the device followed by three address bytes consisting of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the page in the main memory to be written and 8 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase). The programming of the page is internally self-timed and should take place in a maximum time of tP. During this time, the status register will indicate that the part is busy. 7.4 Page Erase The Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the DataFlash standard page size (264 bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 6 don’t care bits, 9 page address bits (PA8 - PA0) that specify the page in the main memory to be erased and 9 don’t care bits. To perform a page erase in the binary page size (256 bytes), the opcode 81H must be loaded into the device, followed by three address bytes consist of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the page in the main memory to be erased and 8 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase operation is internally self-timed and should take place in a maxi- mum time of tPE. During this time, the status register will indicate that the part is busy. 7.5 Block Erase A block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands. To perform a block erase for the DataFlash standard page size (264 bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 6 don’t care bits, 6 page address bits (PA8 -PA3) and 12 don’t care bits. The 6 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (256 bytes), the opcode 50H must be loaded into the device, followed by three address bytes consisting of 7 don’t care bits, 6 page address bits (A16 - A11) and 11 don’t care bits. The 6 page address bits are used to specify which block of eight pages is to be erased. When a low- to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed and should take place in a maximum time of tBE. During this time, the status register will indicate that the part is busy. |
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