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EM68932DVKA-75H Datasheet(PDF) 11 Page - Etron Technology, Inc.

Part # EM68932DVKA-75H
Description  4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM68932DVKA-75H Datasheet(HTML) 11 Page - Etron Technology, Inc.

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EtronTech
EM68932DVKA
Etron Confidential
11
Rev. 1.0
Mar. 2009
Write Interrupted by Read & DM
A Burst Write can be interrupted by a Read command to any bank. The DQ must be in the high impedance state at
least one clock cycle before the interrupting read data appears on the outputs to avoid data contention. When the
Read command is to be asserted, any residual data from the Burst Write sequence must be masked by DM. The
delay from the last data to the Read command (tWTR) is required to avoid data contention inside the DRAM. Data
presented on the DQ pins before the Read command is initiated will actually be written to the memory. A Read
command interrupting a write sequence can not be issued at the next clock edge following the Write command.
Write Interrupted by Precharge & DM
A Burst Write can be interrupted by a Precharge of the same bank before completion of the previous burst. A write
recovery time (tWR) is required from the last data to the Precharge command. When the Precharge command is
asserted, any residual data from the Burst Write cycle must be masked by DM.
Burst Stop Command
The Burst Stop command is initiated by having RAS and CAS High with CS and WE Low at the rising edge of
the clock only. The Burst Stop command has the fewest restrictions, making it the easiest method to use when
terminating a burst operation before it has been completed. When the Burst Stop command is issued during a Burst
Read cycle, both the data and DQS (Data Strobe) go to a high impedance state after a delay which is equal to the
CAS latency set in the Mode Register. The Burst Stop command, however, is not supported during a Burst Write
operation.
DM Masking Function
The DDR SDRAM has a Data Mask function that can be used in conjunction with the data write cycle only, not the
read cycle. When the Data Mask is activated (DM High) during a write operation, the write data is masked
immediately (DM to Data Mask latency is zero). DM must be issued at the rising edge or the falling edge of Data
Strobe instead of at a clock edge.
Auto Precharge Operation
Auto Precharge is a feature which performs the same individual bank precharge function as described above, but
without requiring an explicit command. This is accomplished by using A10 (A10 = High), to enable Auto Precharge
in conjunction with a specific READ or WRITE command. A precharge of the bank / row that is addressed with the
READ or WRITE command is automatically performed upon completion of the read or write burst. Auto Precharge
is non persistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto
Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue
another command to the same bank until the precharging time (tRP) is completed. When the Auto Precharge
command is activated, the active bank automatically begins to precharge at the earliest possible moment during a
read or write cycle after tRAS (min) is satisfied.
Precharge Command
The Precharge command is issued when CS , RAS , and WE are Low and CAS is High at the rising edge of the
clock (CK). The Precharge command can be used to precharge any bank individually or all banks simultaneously.
The Bank Select addresses (BA0, BA1) are used to define which bank is precharged when the command is
initiated. For a write cycle, tWR (min) must be satisfied from the start of the last Burst Write cycle until the Precharge
command can be issued. After tRP from the precharge, an Active command to the same bank can be initiated.
Auto Refresh
An Auto Refresh command is issued by having CS , RAS , and CAS held Low with CKE and WE High at the
rising edge of the clock (CK). All banks must be precharged and idle for a tRP (min) before the Auto Refresh
command is applied. The refresh addressing is generated by the internal refresh address counter. This makes the
address bits “Don’t Care" during an Auto Refresh command. When the refresh cycle is complete, all banks will
be in the idle state. A delay between the Auto Refresh command and the next Active command or subsequent Auto
Refresh command must be greater than or equal to the tRFC (min).


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