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IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C 150 °C 1 10 100 1000 1 10 100 1000 t AV [µs] 25 °C 175 °C 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -V SD [V] Ciss Coss Crss 10 4 10 3 10 2 10 1 0 5 10 15 20 25 30 -V DS [V] -85µA -850µA 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 6 2008-07-29 |
