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4 page 
IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V; SMD 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25°C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 1 10 100 1000 0.1 1 10 100 -V DS [V] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 t p [s] 0 10 20 30 40 50 60 70 0 50 100 150 200 T C [°C] 0 10 20 30 40 50 0 50 100 150 200 T C [°C] Rev. 1.0 page 4 2008-07-29 |
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