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IPG20N06S3L-35 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPG20N06S3L-35 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPG20N06S3L-35 OptiMOS®-T Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current one channel active I D T C=25 °C, V GS=10 V 1) 20 A T C=100 °C, V GS=10 V 2) 15.5 Pulsed drain current 2) one channel active I D,pulse - 80 Avalanche energy, single pulse 2, 5) E AS I D=10A 55 mJ Avalanche current, single pulse 5) I AS - 20 A Gate source voltage 4) V GS - ±16 V Power dissipation one channel active P tot T C=25 °C 30 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value V DS 55 V R DS(on),max 5) 35 m Ω I D 20 A Product Summary Type Package Marking IPG20N06S3L-35 PG-TDSON-8-4 3N06L35 PG-TDSON-8-4 Rev. 1.0 page 1 2008-09-23 |
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