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CIPOS™ IKCS17F60F2A IKCS17F60F2C Data Sheet 11/18 Rev. 2, March 2009 Dynamic Parameters (Tc = 25°C, VDD = 15V, if not stated otherwise) Value Description Condition Symbol min typ max Unit Turn-on propagation delay High side or low side VLIN,HIN = 0V; Iout = 10A, VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A, VDC = 300V tr - 34 - Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 10A, VDC = 300V td(off) - 854 - Turn-off fall time High side or low side VLIN,HIN = 0V Iout = 10A, VDC = 300V tf - 40 - Shutdown propagation delay ITRIP VITRIP = 1V, Iu, Iv, Iw =10A tITRIP - 1000 - Input filter time ITRIP VITRIP = 1V tITRIPmin 155 210 380 Propagation delay ITRIP to FAULT VITRIP = 1V tFLT 370 Input filter time at LIN for turn on and off and input filter time at HIN for turn on only VLIN,HIN = 0 V & 5V tFILIN 120 270 - Input filter time at HIN for turn off VHIN = 5V tFILIN1 - 220 - Input filter time at HIN for turn off VHIN = 5 V tFILIN2 - 400 - ns Fault clear time after ITRIP-fault VLIN,HIN = 0 V & 5V VITRIP = 0 V tFLTCLR - 4.7 - ms Min. deadtime between low side and high side DTPWM - 1 - µs Deadtime of gate drive circuit DTIC - 380 - ns IGBT Turn-on Energy (includes reverse recovery of diode) Iout = 10A, VDC = 300V TvJ = 25°C TvJ = 150°C Eon - - 320 430 - - IGBT Turn-off Energy Iout = 10A, VDC = 300V TvJ = 25°C TvJ = 150°C Eoff - - 200 270 - - Diode recovery Energy Iout = 10A, VDC = 300V TvJ = 25°C TvJ = 150°C Erec - - 46 115 - - µJ |
