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14 page 
CIPOS™ IKCS17F60B2A IKCS17F60B2C Data Sheet 14/18 Rev. 2.2, March 2009 0A 5A 10A 15A 20A 25A 0.00mJ 0.50mJ 1.00mJ 1.50mJ 2.00mJ 2.50mJ E on E rec E off 25°C 50°C 75°C 100°C 125°C 0.00mJ 0.10mJ 0.20mJ 0.30mJ 0.40mJ E rec E on E off IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE Figure 9. Typical switching energy losses as a function of collector current (inductive load, TvJ = 150°C, VCE = 300V, VDD = 15V Dynamic test circuit in Figure A) Figure 10. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, VDD = 15V, IC = 10A Dynamic test circuit in Figure A) -25°C 0°C 25°C 50°C 75°C 100°C 1kOhm 10kOhm 100kOhm 1000kOhm min typ max 100ns 1µs 10µs 100µs 1ms 10ms 100ms 10 -2K/W 10 -1K/W 10 0K/W Single Pulse IGBT Diode TNTC, NTC TEMPERATURE tP, PULSE WIDTH Figure 11. Characteristic of NTC as a function of NTC temperature Figure 12. Transient thermal impedance as a function of pulse width (D=tP/T) |
