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MXHV9910BETR Datasheet(PDF) 4 Page - Clare, Inc.

Part # MXHV9910BETR
Description  Off-Line, High Brightness LED Driver
Download  11 Pages
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Manufacturer  CLARE [Clare, Inc.]
Direct Link  http://www.clare.com
Logo CLARE - Clare, Inc.

MXHV9910BETR Datasheet(HTML) 4 Page - Clare, Inc.

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MXHV9910
4
www.clare.com
R01
1.4 Recommended Operating Conditions
1.5 Electrical Characteristics
Unless otherwise specified, all electrical specifications are provided for TA=25°C.
1.6 Thermal Characteristics
1 Use of a four-layer PCB can improve thermal dissipation (reference EIA/JEDEC JESD51-5).
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
Input Voltage Range
VIN
8
-
450
VDC
PWMD Frequency
fPWMD
-
500
-
Hz
Operating Temperature
TA
-40
-
+85
°C
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
Input
Input DC Voltage Range
DC Input Voltage
VIN
8
-
450
VDC
Shut-Down Mode Supply Current
PWMD to GND, VIN=15 to 450V
IINSD
-0.3
0.6
mA
Maximum Voltage to VDD Pin
External Voltage applied to VDD Pin
VDDmax
--
12
V
Regulator
Internal Voltage Regulator
VIN=15V to 450V,
IDD(ext)=0,
GATE Output=Open
VDD
7.2
7.8
8.4
VDC
VDD Current Available
for External Circuitry
-
IDD(ext)
--
2
mA
VDD Load Regulation
VIN=15V, IL=1mA
ΔV
DD
-
-
200
mV
PWM Dimming
PWMD Input Low Voltage
VIN=8V to 450V
VEN(low)
--
0.5
V
PWMD Input High Voltage
VIN=8V to 450V
VEN(high)
2.4
-
-
PWMD Pull-Down Resistance
VIN=12V, VPWMD=VDD
REN
70
115
150
k
Ω
Current Sense Comparator
Current Sense (CS) Input Current
CS Low
CS=0V
IIL
--45
-90
μA
CS High
CS=VDD
IIH
-0
±15
Current Sense Threshold Voltage
-40°C < TA < 85°CVCS(high)
200
-
280
mV
Current Sense Blanking Interval
RT=400kΩ
tBLANK
-
400
-
ns
Delay from CS Trip to Gate Low
RT=400kΩ
tDELAY
-
300
-
ns
Oscillator
Oscillator Frequency (Gate Driver)
RT=400kΩ
fS
51
64
77
kHz
Gate Driver
Gate High Output Voltage
IOUT= -10mA
VGATE(hi)
VDD-0.3
--
V
Gate Low Output Voltage
IOUT=10mA
VGATE(lo)
-
0.03
0.3
Gate Output Rise Time
CGATE=500pF
tRISE
-16-
ns
Gate Output Fall Time
CGATE=500pF
tFALL
-7-
Parameter
Package
Symbol
Minimum
Typical
Maximum
Unit
Thermal Resistance,
Junction-to-Ambient
SOIC-8 With Thermal Pad (BE) 1
RθJA
-50-
°C/W
SOIC-8 W/O Thermal Pad (B)
-
128
-


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