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IPD30N06S4L-23 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPD30N06S4L-23
Description  OptiMOS-T2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD30N06S4L-23 Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPD30N06S4L-23
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I D
T C=25°C, V GS=10V
30
A
T C=100°C, V GS=10V
1)
21
Pulsed drain current
1)
I D,pulse
T C=25°C
120
Avalanche energy, single pulse
1)
E AS
I D=15A
18
mJ
Avalanche current, single pulse
I AS
-
30
A
Gate source voltage
V GS
-
±16
V
Power dissipation
P tot
T C=25°C
36
W
Operating and storage temperature
T j, T stg -
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
−
Value
V DS
60
V
R DS(on),max
23
m
Ω
I D
30
A
Product Summary
PG-TO252-3-11
Type
Package
Marking
IPD30N06S4L-23
PG-TO252-3-11
4N06L23
Rev. 1.0
page 1
2009-03-23


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