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IPD30N03S4L-14 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD30N03S4L-14 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25 °C, V GS=10 V 30 A T C=100 °C, V GS=10 V 2) 27 Pulsed drain current 2) I D,pulse T C=25 °C 120 Avalanche energy, single pulse E AS I D=30 A 16 mJ Avalanche current, single pulse I AS T C=25 °C 30 A Gate source voltage V GS ±16 V Power dissipation P tot T C=25 °C 31 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 30 V R DS(on),max 13.6 m Ω I D 30 A Product Summary PG-TO252-3-11 Type Package Marking IPD70N03S4L-04 PG-TO252-3-11 4N03L04 Rev. 2.0 page 1 2007-05-22 |
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