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BTM7700G Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BTM7700G Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 18 page BTM7700G Data Sheet 3 Rev. 1.0, 2007-06-12 5 Electrical Characteristics 5.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings1) – 40 °C < T j < 150 °C 1) Not subject to production test; specified by design Pos. Parameter Symbol Limit Values Unit Remarks min. max. High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) 5.1.1 Supply voltage V S – 0.3 42 V – 5.1.2 Supply voltage for full short circuit protection V S(SCP) – 28 V 5.1.3 HS-drain current2) 2) Single pulse I S – 7 3) 3) Internally limited A T A = 25°C; tP < 100 ms 5.1.4 HS-input current I IH – 5 5 mA Pin IH1 and IH2 5.1.5 HS-input voltage V IH – 10 16 V Pin IH1 and IH2 Status Output ST 5.1.6 Status pull up voltage V ST – 0.3 5.4 V 5.1.7+ Status Output current I ST – 5 5 mA Pin ST 5.1.8 Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2) 5.1.9 Drain-Source-Clamp voltage V DSL 55 – V V IL = 0 V; ID ≤ 1 mA T j = 25°C 5.1.10 LS-drain current2) I DL – 7 6 A T A = 25°C; tP < 100 ms 5.1.11 – 8 A T A = 25°C; tP < 10 ms 5.1.12 – 18 A T A = 25°C; tP < 1 ms 5.1.13 LS-input voltage V IL – 20 20 V Pin IL1 and IL2 Temperatures 5.1.14 Junction temperature T j – 40 150 °C – 5.1.15 Storage temperature T stg – 55 150 °C – ESD Protection4) 4) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5k Ω, 100pF) 5.1.16 Input LS-Switch V ESD – 0.3 kV 5.1.17 Input HS-Switch V ESD – 1 kV 5.1.18 Status HS-Switch V ESD – 2 kV 5.1.19 Output LS and HS-Switch V ESD – 8 kV all other pins connected to Ground |
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