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SPI-8000A Datasheet(PDF) 3 Page - Sanken electric |
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SPI-8000A Datasheet(HTML) 3 Page - Sanken electric |
3 / 3 page 54 ICs ■Ta-PD Characteristics ■Typical Connection Diagram SPI-8010A C1: 220 µF/63V C2: 470 µF/25V C3: 0.1 µF C4: 1000pF C5: 0.1 µF C6: 0.047 µF C7: 0.1 µF C8: 0.1 µF C9: 6800pF R1: 47 Ω L1: 47 µH D1: SPB-G56S (Sanken) Diode D1 • Be sure to use a Schottky-barrier diode for D1. If other diodes like fast recovery diodes are used, ICs may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage. Choke coil L1 • If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value. • As the overcurrent protection starting current is about 4.5A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to overload or short-circuited load. Capacitors C1, C2 • As large ripple currents flow through C1 and C2, use high-frequency and low-impedance capacitors aiming for switching-mode-power-supply use. Especially when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures. For C2, do not use a capacitor with an extremely low equivalent series resistance (ESR) such as an OS capacitor or a tantalum capacitor, which may cause an abnormal oscillation. Resistors R2, R3 •R2 and R3 are the resistors to set the output voltage. Set their values so that IREF becomes approx. 2mA. Obtain R2 and R3 values by the following formula: To create the optimum operating conditions, place the components as close as possible to each other. Reg CE/SS 53 4 VIN SWOUT VREF VIN GND V0 GND 11 C5 Comp 14 12 C6 C9 C3 D1 L1 R2 R3 IREF AGND DGND B.S SPI-8010A 1 15 7 R1 C4 C1 C7 + C2 C8 + Note 1: The efficiency depends on the input voltage and the output cur- rent. Therefore, obtain the value from the efficiency graph and substitute the percentage in the formula above. Note 2: Thermal design for D1 must be considered separately. VO : Output voltage VIN : Input voltage IO : Output current ηχ : Efficiency (%) VF : Diode D1 forward voltage SPB-G56S···0.4V(IO=2A) 3.00 2.50 2.00 1.50 1.00 0.50 0 –30 0 25 50 75 100 125 Ambient Temperature Ta ( °C) j-a:62.5 °C/W(0.84cm2) j-a:47.6 °C/W(8.64cm2) j-a:41.7 °C/W(30.8cm2) θ θ θ PD=VO • IO 100 –1 –VF • IO 1– VO ηχ VIN 1-1-2 Switching Mode Regulator ICs R2= (VOUT–VREF) = (VOUT–1) ( Ω), R3 = VREF = 1 500( Ω) IREF 2 ×10–3 IREF 2 ×10–3 = . . |
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