TPS5410-EP

DISSIPATION RATINGS

(1) (2)

THERMAL IMPEDANCE

PACKAGE

JUNCTION-TO-AMBIENT

75°C/W

(1)

Maximum power dissipation may be limited by overcurrent protection.

(2)

distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or

below 125°C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more

information.

(3)

Test board conditions:

(a) 3 in x 3 in, 2 layers, thickness: 0.062 inch.

(b) 2 oz. copper traces located on the top and bottom of the PCB.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Input voltage range, VIN

5.5

36

V

Operating junction temperature

–55

125

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY VOLTAGE (VIN PIN)

VSENSE = 2 V, Not switching, PH pin

3

4.4

mA

open

Quiescent current

Shutdown, ENA = 0 V

18

50

μA

UNDERVOLTAGE LOCK OUT (UVLO)

Start threshold voltage, UVLO

5.3

V

Hysteresis voltage, UVLO

330

mV

VOLTAGE REFERENCE

1.202

1.221

1.239

Voltage reference accuracy

V

1.192

1.221

1.245

OSCILLATOR

400

500

600

Internally set free-running frequency

kHz

380

600

Minimum controllable on time

150

210

ns

Maximum duty cycle

87%

89%

ENABLE (ENA PIN)

Start threshold voltage, ENA

1.3

V

Stop threshold voltage, ENA

0.5

V

Hysteresis voltage, ENA

450

mV

Internal slow-start time (0 ~ 100%)

5.35

8

10

ms

CURRENT LIMIT

1.2

1.5

1.8

Current limit

A

0.45

4.6

Current limit hiccup time

13

16

22.5

ms

THERMAL SHUTDOWN

Thermal shutdown trip point

135

162

°C

Thermal shutdown hysteresis

14

°C

OUTPUT MOSFET

VIN = 5.5 V

150

High side power MOSFET switch

m

Ω

VIN = 10 V - 36 V

110

Copyright © 2009, Texas Instruments Incorporated

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