76V, APD, Bias Output Stage with

Current Monitoring

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Ω load.

Note 2: Not production tested. Guaranteed by design.

Voltage Range on GATE and CLAMP

Relative to GND...................................................-0.3V to +12V

Voltage Range on MIRIN, MIROUT, FBIN

MIR1, and MIR2 Relative to GND........................-0.3V to +80V

Voltage Range on FBOUT Relative to GND ..........-0.3V to +6.0V

Voltage Range on LX Relative to GND...................-0.3V to +85V

Operating Junction Temperature Range ...........-40°C to +150°C

Storage Temperature Range .............................-55°C to +135°C

Soldering Temperature ..........................Refer to the IPC JEDEC

J-STD-020 Specification.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Switching Frequency

0

1.2

MHz

40

FET Capacitance

90

pF

FET Gate Resistance

22

1

2

FET On-Resistance

0.75

1.4

GATE Voltage

0

11

V

Switching Current

680

mA

LX Voltage

80

V

LX Leakage

-1

+1

μA

CLAMP Voltage

0

11

V

CLAMP Threshold

1.25

1.8

2.35

V

CLAMP = low

1.8

2.75

3.85

mA

Maximum MIROUT Current

CLAMP = high

10

μA

MIR1 to MIROUT Ratio

0.096

0.100

0.104

A/A

MIR2 to MIROUT Ratio

0.192

0.200

0.208

A/A

MIR1, MIR2 Rise Time

(20%/80%)

(Note 1)

30

ns

Shutdown Temperature

(Note 2)

+150

°C

Hysteresis Temperature

(Note 2)

5

°C

Leakage on GATE and CLAMP

-1

+1

μA

59.5

60.25

Resistor-Divider Tempco

±50

ppm/°C

Resistor-Divider End-to-End

Resistance

308

385

481

k