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CMT08N50XN220 Datasheet(PDF) 1 Page - Champion Microelectronic Corp. |
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CMT08N50XN220 Datasheet(HTML) 1 Page - Champion Microelectronic Corp. |
1 / 7 page CMT08N50 POWER FIELD EFFECT TRANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View 1 23 D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current - Continuous - Pulsed ID IDM 8.0 24 A Gate-to-Source Voltage - Continue - Non-repetitive VGS VGSM ±30 ±40 V V Total Power Dissipation TO-220 TO-220FP PD(Max) 83 30 W Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω) EAS 320 mJ Thermal Resistance - Junction to Case - Junction to Ambient θJC θJA 1.0 62.5 ℃ /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 ℃ |
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