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CMT04N60GN220FP Datasheet(PDF) 1 Page - Champion Microelectronic Corp.

Part # CMT04N60GN220FP
Description  POWER MOSFET
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Manufacturer  CHAMP [Champion Microelectronic Corp.]
Direct Link  http://www.champion-micro.com
Logo CHAMP - Champion Microelectronic Corp.

CMT04N60GN220FP Datasheet(HTML) 1 Page - Champion Microelectronic Corp.

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CMT04N60
POWER MOSFET
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
1
23
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain to Current - Continuous
Pulsed
ID
IDM
4.0
14
A
Gate-to-Source Voltage - Continue
Non-repetitive
VGS
VGSM
±30
±40
V
V
Total Power Dissipation
TO-220
TO-220FP
PD
83
30
W
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
EAS
80
mJ
Thermal Resistance - Junction to Case
Junction to Ambient
θJC
θJA
1.30
100
/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
260


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