 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
CMT01N60GN251 Datasheet(PDF) 2 Page - Champion Microelectronic Corp. |
|
||||||||||||||||||||||||||||||
CMT01N60GN251 Datasheet(HTML) 2 Page - Champion Microelectronic Corp. |
|
|
2 / 8 page  CMT01N60 POWER FIELD EFFECT TRANSISTOR 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT01N60N251 TO-251 CMT01N60N252 TO-252 CMT01N60N92 TO-92 CMT01N60GN251* TO-251 CMT01N60GN252* TO-252 CMT01N60GN92* TO-92 *Note: G : Suffix for Pb Free Product ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT01N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) IDSS 0.1 0.3 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * RDS(on) 8.0 Ω Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) * gFS 0.5 mhos Input Capacitance Ciss 210 pF Output Capacitance Coss 28 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 4.2 pF Turn-On Delay Time td(on) 8 ns Rise Time tr 21 ns Turn-Off Delay Time td(off) 18 ns Fall Time (VDD = 300 V, ID = 1.0 A, VGS = 10 V, RG = 18Ω) * tf 24 ns Total Gate Charge Qg 8.5 14 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge (VDS = 400 V, ID = 1.0 A, VGS = 10 V)* Qgd 4 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/μs) trr 350 500 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance |
Similar Part No. - CMT01N60GN251 |
|
Similar Description - CMT01N60GN251 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
