SGA-9089Z datasheet(4/6 Pages) RFMD

Part #	SGA-9089Z

Description	HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

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Manufacturer	RFMD [RF Micro Devices]

Direct Link	http://www.rfmd.com

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EDS-105051 Rev F

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA-9089Z

Suggested Pad Layout

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

Function

Description

1RF IN

RF input / Base Bias. External DC blocking capacitor required.

2, 4

GND

Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible.

3RF OUT

RF Out / Collector bias. External DC blocking capacitor required.

Preliminary

Pi D

i ti

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