Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
CGR-0218Z
PUSH-PULL 5MHz to 210MHz HIGH
LINEARITY InGaP HBT AMPLIFIER
RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
with the InGaP process technology for excellent reliability. A Darlington configura-
tion is utilized for broadband performance. The heterojunction increases break-
down voltage and minimizes leakage current between junctions. The CGR-0218Z
contains two amplifiers for use in wideband push-pull CATV amplifiers requiring
excellent second order performance. The second and third order non-linearities are
greatly improved in the push-pull configuration.
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Amplifier Configuration
5V Single Supply
Excellent Linearity
Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
PC Board Layout
SOIC-8 Package
Available in Lead-Free, RoHS
Compliant Packaging
Applications
CATV Head Ends
CATV Line Drivers
DOCSIS Cable Modems
DS091015
Package: SOIC-8
CGR-0218Z
Push-Pull
5MHz to
210MHz High
Linearity
InGaP HBT
Amplifier
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
17.3
dB
5MHz to 210MHz
Gain Flatness
±0.2
dB
5MHz to 210MHz
OIP3
42
dBm
5MHz to 210MHz, Tone Spacing=1MHz, POUT per
tone=+6dBm
P1dB
23
dBm
5MHz to 210MHz
Input Return Loss
22
dB
5MHz to 210MHz
Output Return Loss
22
dB
5MHz to 210MHz
Noise Figure, Balun Insertion Loss
Included
4.0
dB
5MHz to 210MHz
CSO
80
dBc
7 Ch, Flat Tilt, +50dBmV
CTB
67
dBc
7 Ch, Flat Tilt, +50dBmV
XMOD
66
dBc
7 Ch, Flat Tilt, +50dBmV
Device Operating Voltage
5.0
V
Device Operating Current
217
mA
5V VCC
Thermal Resistance (Junction to
Lead)
30
°C/W
Junction to case slug
Test Conditions: VCC=5V, ID=217mA Typ., TL=25°C, ZS=ZL=75, Push Pull Application Circuit